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Advanced Technical Information
HiPerFET TM
IXFN 20N120
V DSS
= 1200 V
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t rr
G
S
D
S
I D25 = 20 A
R DS(on) = 0.75 ?
t rr ≤ 300 ns
Symbol
Test Conditions
Maximum Ratings
miniBLOC, SOT-227 B (IXFN)
V DSS
V DGR
V GS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
Transient
1200
1200
± 30
± 40
V
V
V
V
E153432
G
S
I D25
I DM
T C = 25 ° C, Chip capability
T C = 25 ° C, pulse width limited by T JM
20
80
A
A
D
S
I AR
E AR
E AS
dv/dt
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
10
40
2
5
A
mJ
J
V/ns
G = Gate D = Drain
S = Source TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
P D
T J
T JM
T stg
V ISOL
T C = 25 ° C
50/60 Hz, RMS
I ISOL ≤ 1 mA
t = 1 min
t=1s
780
-55 ... +150
150
-55 ... +150
2500
3000
W
° C
° C
° C
V~
V~
Features
? International standard package
? miniBLOC, with Aluminium nitride
isolation
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)
M d
Weight
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
rated
? Low package inductance
? Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
? DC-DC converters
? Battery chargers
? Switched-mode and resonant-mode
V DSS
V GH(th)
I GSS
V GS = 0 V, I D = 1 mA
V DS = V GS , I D = 8 mA
V GS = ± 30 V DC , V DS = 0
1200
2.5
4.5
± 100
V
V
nA
?
?
power supplies
DC choppers
Temperature and lighting controls
I DSS
R DS(on)
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = 0.5 ? I D25
Pulse test, t ≤ 300 μ s,
duty cycle d ≤ 2 %
T J = 25 ° C
T J = 125 ° C
100
2
0.75
μ A
mA
?
Advantages
? Easy to mount
? Space savings
? High power density
? 2003 IXYS All rights reserved
DS99116(11/03)
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